Nanowires for Hard Drives and RAM

Magnetic nanowires with three layers (FM/NM/FM) are ideal for ultra-small read sensors that are synthesized as arrays for adjacent track cancellation. These 10-nm diameter nanowires have 19% magneto-resistances and the high switching current densities that are required for read sensors. Upon synthesizing nanowires with many more layers, the switching current density is decreased by orders of magnitude without  loss to magnetoresistance. These  arrays are ideal for magnetic random access memory (MRAM).